|
MAXIMUM RATINGS
|
SYMBOL
|
DEVICE NUMBERS
|
UNITS
|
REPETITIVE PEAK OFF-STATE VOLTAGE
(1)GATE OPEN, AND TJ = 110° C /VDRM |
200
400
600
|
SIPT215
SIPT415
SIPT615
|
SIPT225
SIPT425
SIPT625
|
VOLT
|
| RMS ON-STATE CURRENT
AT TC = 80º C AND CONDUCTION, ANGLE OF 360º |
IT(RMS)
|
15
|
25
|
AMP
|
| PEAK SURGE (NON-REPETITIVE)
ON-STATE CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ |
ITSM
|
150
|
250
|
AMP
|
| PEAK GATE - TRIGGER
CURRENT FOR 3µSEC. MAX. |
IGTM
|
4
|
4
|
AMP
|
| PEAK GATE - POWER
DISSIPATION AT IGT < IGTM |
PGM
|
40
|
40
|
WATT
|
| AVERAGE GATE -
POWER DISSIPATION |
PG(AV)
|
0.8
|
0.8
|
WATT
|
| STORAGE TEMPERATURE
RANGE |
TSTG
|
-40 to +150
|
°C
|
| OPERATING TEMPERATURE
RANGE, TJ |
TOPER
|
-40 to +110
|
°C
|
| PEAK OFF - STATE
CURRENT (1) GATE OPEN TC = 110° C VDRM = MAX. RATING |
IDRM
|
1.0
|
1.0
|
MA MAX.
|
| MAXIMUM ON - STATE
VOLTAGE, (1) AT TC = 25° C AND IT = RATED AMPS |
VTM
|
2.2
|
2.5
|
VOLT MAX.
|
DC HOLDING CURRENT,
(1) GATE OPEN;
AND TC = 25° C |
IHO
|
60
|
60
|
MA MAX.
|
CRITICAL RATE-OF-RISE
OF OFF-STATE VOLTAGE,
(1) FOR VD =VDRM GATE OPEN, TC = 110° C |
CRITICALdv/dt
|
100
|
100
|
V/µSEC.
|
CRITICAL
RATE-OF-RISE OF COMMUTATION;
VOLTAGE,(1) ATTC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT(RMS) |
COMMUTATING dv/dt
|
3
|
3
|
V/µSEC.
|
DC GATE - TRIGGER
CURRENT FORVD = 12VDC.;RL = 30 ohm
AND AT TC = 25° C (T2 + GATE + T2 - GATE-)Q 1 &3
(T2 + GATE - T2 - GATE +) Q 2 & 4 |
IGT *
|
100 I, III
150 II, IV
|
100 I, III
150 II, IV
|
MA MAX.
|
DC GATE - TRIGGER
VOLTAGE FOR VD = 12VDC.;
RL = 30 ohm AND AT TC = 25° C; |
VGT
|
2.5
|
2.5
|
VOLT MAX.
|
GATE CONTROLLED
TURN-ON TIMEFOR VD = VDRM;
IGT = 200MA, TR = 0.1 µSEC. IT = 10A (PEAK) AND;
TC = 25° C |
TGT
|
3
|
3
|
µSEC.
|
| THERMAL RESISTANCE, JUNCTION-TO-CASE |
R0J-C
|
2.1
|
2.1
|
°C / WATT TYP
|