30 and 40 AMP 1/2" PRESS FIT STUD MOUNT TRIAC

1. GATE
2. MT-1
3. MT-2 (stud)
SYM.
INCHES
A
1.150
B
0.114
0.110
C
0.453
0.422
D
1.603
1.572
E
1.243
1.132
F
0.562
0.544
MAXIMUM RATINGS
SYMBOL
DEVICE NUMBERS
UNITS
REPETITIVE PEAK OFF-STATE VOLTAGE
(1)GATE OPEN, AND TJ = 110° C /VDRM
200
400
600
SPT230
SPT430
SPT630
SPT240
SPT440
SPT640
VOLT
RMS ON-STATE CURRENT AT TC = 80º C AND CONDUCTION, ANGLE OF 360º
IT(RMS)
30
40
AMP
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ
ITSM
300
400
AMP
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
IGTM
12
12
AMP
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
PGM
40
40
WATT
AVERAGE GATE - POWER DISSIPATION
PG(AV)
0.75
0.75
WATT
STORAGE TEMPERATURE RANGE
TSTG
-40 to +150
°C
OPERATING TEMPERATURE RANGE, TJ
TOPER
-40 to +110
°C
PEAK OFF - STATE CURRENT (1) GATE OPEN TC = 110° C VDRM = MAX. RATING
IDRM
1.0
1.0
MA MAX.
MAXIMUM ON - STATE VOLTAGE, (1) AT TC = 25° C AND IT = RATED AMPS
VTM
2.0
2.0
VOLT MAX.
DC HOLDING CURRENT, (1) GATE OPEN
AND TC = 25° C
IHO
60
60
MA MAX.
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE,
(1) FOR VD =VDRM GATE OPEN, TC = 110° C
CRITICAL dv/dt
200
200
V/µSEC.
CRITICAL RATE-OF-RISE OF COMMUTATION
VOLTAGE,(1) AT TC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT(RMS)
COMMUTATING dv/dt
3
3
V/µSEC.
DC GATE - TRIGGER CURRENT FORVD = 12VDC.
RL=30 ohm AND AT TC = 25°C (T2 + GATE + T2 - GATE-) Q1 &3
(T2 + GATE - T2 - GATE +) Q 2 & 4
IGT*
100 I, III
150 II, IV
100 I, III
150 II, IV
MA MAX.
DC GATE - TRIGGER VOLTAGE FORVD = 12VDC.
RL = 30 ohm AND AT TC = 25° C
VGT
2.5
2.5
VOLT MAX.
GATE CONTROLLED TURN-ON TIME FOR VD = VDRM
IGT = 200MA, TR = 0.1 µSEC.IT = 10A (PEAK) AND TC = 25° C
TGT
3
3
µSEC.
THERMAL RESISTANCE, JUNCTION-TO-CASE
R0J-C
1.8
1.8
°C / WATT TYP
Notes:(1) All values apply in either direction. *Other gate options available; Consult factory