TO-218 NON-ISOLATED SCR
1. CATHODE
2. ANODE
3. GATE
4. Common with Anode
MAXIMUM RATINGS
SYMBOL
DEVICE NUMBERS
UNITS
Repetitive Peak Off-State Voltage. Repetitve Peak Reverse Voltage.
Gate open, and Tj=110°C /VDRM
50
100
200
400
600
HNS025
HNS125
HNS225
HNS425
HNS625
HNS040
HNS140
HNS240
HNS440
HNS640
HNS055
HNS155
HNS255
HNS455
HNS655
HNS070
HNS170
HNS270
HNS470
HNS670
VOLT
RMS On-State Current at TC=80 °C
and Conduction Angle of 180°
It(RMS)
25
40
55
70
AMP
Peak Surge (Non-Repetitive) On-State
Current, One-Cycle, at 50Hz or 60 Hz
ITSM
250
400
550
700
AMP
Peak Gate-Trigger Current for 3µsec. Max.
IGTM
5
5
5
5
AMP
Peak Gate-Power Dissipation at IGT < IGTM
PGM
20
20
20
20
WATT
Average Gate-Power Dissipation
PG(AV)
0.5
0.5
0.5
0.5
WATT
Storage Temperature Range
Tstg
-40 to +150
°C
Operating Temperature Range, Tj
Toper
-40 to +110
°C
Peak Off-State Current, Gate Open
TC=110° C VDRM &VRRM=Max. Rating
IDRM
0.5
0.5
0.5
0.5
mA
MAX.
Maximum On-State Voltage, (PEAK) at TC=25°C, and IT = Rated Amps
VTM
1.6
1.8
1.8
1.8
VOLT
MAX
DC Holding Current, Gate Open
and TC = 25°C
IHO
100
100
100
100
mA
MAX.
Critical Rate-Of-Rise of Off-State Voltage,Gate Open, TC = 110°C
Critical
dv/dt
200
200
200
200
V/µsec.
DC Gate – Trigger Current for Anode Voltage = 12VDC, RL = 60 ohm and at TC=25° C
IGT
40
40
40
50
mA
MAX.
DC Gate-Trigger Voltage for Anode Voltage=12VDC, RL = 60 ohm and at TC=25°C
VGT
2
2
2
2
VOLT
MAX
Gate-Controlled Turn-on Time for
t D + t R, IGT=150mA and TC = 25°C
Tgt
2.5
2.5
2.5
2.5
µsec.
Thermal Resistance, Junction-to-Case
RqJ-C
1.0
0.91
1.1
0.9
°C/WATT TYP