TO-218 NON-ISOLATED TRIAC
2. MT 2
3. GATE
4. Common with MT 2
| MAXIMUM RATINGS |
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| Repetitive Peak
Off-State Voltage (1)
Gate Open, and T J = 110° C /VDRM |
400 600 |
HNT416 HNT616 |
HNT425 HNT625 |
HNT440 HNT640 |
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| RMS On-State Current at Tc = 80 ° C and Conduction Angle of 360° |
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| Peak Surge (Non-Repetitive) On-State Current, One-Cycle, at 50Hz or 60 Hz |
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| Peak Gate-Trigger Current for 3µsec. Max. |
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| Peak Gate-Power Dissipation at IGT < IGTM |
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| Average Gate-Power Dissipation |
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| Storage Temperature Range |
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| Operating Temperature Range, Tj |
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| Peak Off-State
Current, (1) Gate Open
TC=110° C VDRM=Max. Rating |
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| Maximum On-State Voltage, (1) at Tc=25°C and IT = Rated Amps |
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| DC Holding Current, (1) Gate Open and TC=25°C |
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| Critical Rate-Of-Rise of Off-State Voltage, (1) for VD=VDRM Gate Open, TC = 110°C |
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| Critical Rate-Of-Rise Of Commutating Voltage, (1) at TC=80° C, Gate Unenergized, VD = VDRM, IT=IT (RMS) |
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| DC Gate - Trigger
Current for VD=12VDC, RL=60 OHM and at TC=25°C
(T2 + GATE + T2 - GATE-) Quads 1 & 3 (T2 + GATE - T2 - GATE +) Quads 2 & 4 |
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150 IV |
150 IV |
150 IV |
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| DC Gate-Trigger Voltage for VD=12VDC, RL=30 OHM and at TC=25°C |
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| Gate-Controlled Turn-on Time for VD=VDRM, IGT=200mA tR=0.1 µsec.,IT=10A (Peak) and TC=25°C |
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| Thermal Resistance, Junction-to-Case |
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