Terminal 1= CATHODE (0.250")
Terminal 2= ANODE (0.250")
Terminal 3= GATE (0.187")
TO-239 SCR
SYM.
INCHES
A
1.182
1.192
B
0.150
0.161
C
0.975
1.025
D
0.175 REF.
E
0.480
0.5
F
0.050 REF.
G
1.507
1.567
H
0.119
0.131
J
-
0.4
K
0.900
0.96
L
0.070 REF.
M
0.778
0.81
MAXIMUM RATINGS
SYMBOL
DEVICE NUMBERS
UNITS
Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Gate Open, and TJ = 110° C /VDRM
50
100
200
400
600
H3SF35
H3SA35
H3SB35
H3SD35
H3SM35
H3SF55
H3SA55
H3SB55
H3SD55
H3SM55
VOLT
RMS On-State Current at TC = 80 ° C and Conduction Angle of 180°
I t(RMS)
35.0
55.0
AMP
Peak Surge (Non-Repetitive) On-State Current, One-Cycle, at 50Hz or 60 Hz
ITSM
350
550
AMP
Peak Gate-Trigger Current for 3µsec. Max.
IGTM
2
2
AMP
Peak Gate-Power Dissipation at IGT < IGTM
PGM
20
20
WATT
Average Gate-Power Dissipation
PG(AV)
0.5
0.5
WATT
Storage Temperature Range
Tstg
-40 to +150
°C
Operating Temperature Range, Tj
Toper
-40 to +110
°C
Peak Off-State Current, Gate Open
TC = 110° C VDRM & VRRM = Max. Rating
IDRM & IRRM
1.0
2
mA MAX.
Maximum On-State Voltage, (PEAK) at TC=25°C and IT = Rated Amps
VTM
1.5
1.6
VOLT MAX
DC Holding Current, Gate Open and TC = 25°C
IHO
80
80
mA MAX.
Critical Rate-Of-Rise of Off-State Voltage, Gate Open, TC = 110°C
Critical
dv/dt
200
200
V/µsec.
DC Gate-Trigger Voltage for VD = 12VDC,RL = 60 OHM and at TC = 25°C
IGT
80
80
V/µsec.
DC Gate - Trigger Voltage for Anode Voltage = 12VDC, RL = 60W and at TC =25° C
V GT
2.0
2.0
mA
MAX.
Gate Controlled Turn-On Time for TD +TR IGT=150mA and TC = 25° C
T gt
2.5
2.5
VOLT MAX
Thermal Resistance,Junction-to-Case
RqJ-C
1.3
0.9
°C/WATT TYP
Notes:
(1) All Hutson Isolated TO-239 SCR’s areUL Recognized. UL number E95589(N).