| MAXIMUM
RATINGS |
SYMBOL
|
DEVICE NUMBERS
|
UNITS |
| Repetitive
Peak Off-State Voltage (1) /VDRM Gate open, and Tj = 110° C |
200V
400V
600V
|
HSC160B
HSC160D
HSC160M
|
HSC165B
HSC165D
HSC165M
|
VOLT
|
RMS On-State Current
at Tc = 80 ° C and
Conduction Angle of 360° |
It(RMS)
|
25.0
|
40.0
|
AMP
|
Peak Surge (Non-Repetitive)
On-State Current,
One-Cycle, at 50Hz or 60 Hz |
ITSM
|
250
|
400
|
AMP
|
| Peak Gate-Trigger
Current for 3µsec. Max. |
IGTM
|
4
|
4
|
AMP
|
| Peak Gate-Power
Dissipation at IGT < IGTM |
PGM
|
40
|
40
|
WATT
|
| Average Gate-Power
Dissipation |
PG(AV)
|
0.8
|
0.8
|
WATT
|
| Storage Temperature
Range |
Tstg
|
-40 to +150
|
°C
|
| Operating Temperature
Range, Tj |
Toper
|
-40 to +110
|
°C
|
Peak Off-State
Current, (1) Gate Open
TC = 110° C VDRM = Max. Rating |
IDRM
|
1
|
2
|
mA
MAX.
|
| Maximum
On-State Voltage, (1) at Tc=25°C and IT = Rated Amps |
VTM
|
1.8
|
2
|
VOLT MAX
|
| DC Holding Current,
(1) Gate Open and TC = 25°C |
IHO
|
80
|
100
|
mA MAX.
|
Critical Rate-Of-Rise
of Off-State Voltage, (1)
for VD=VDRM Gate Open, TC - 110°C |
Critical
dv/dt
|
200
|
200
|
V/µsec.
|
| Critical Rate-Of-Rise
Of Commutating Voltage, (1) at TC = 80° C, Gate Unenergized, VD =
VDRM, IT = IT (RMS) |
Commutating
dv/dt
|
5
|
5
|
V/µsec.
|
DC Gate - Trigger
Current for VD = 12VDC,
RL = 60 OHM and at TC = 25° C
(T2 + GATE + T2 - GATE-) Quads 1 & 3
(T2 + GATE - T2 - GATE +) Quads 2 & 4 |
IGT
|
100 I, III
150 II, IV
|
100 I, III
150 II, IV
|
mA
MAX.
|
DC Gate-Trigger
Voltage for VD = 12VDC,
RL = 30 OHM and at TC = 25°C |
VGT
|
2.5
|
2.5
|
VOLT MAX
|
Gate-Controlleed Turn-On Time for VD=VDRM,IGT=200mA
tR=0.1 µsec.,IT=10A(Peak) and TC=25° C |
Tgt
|
3
|
3
|
µsec.
|
| Thermal Resistance,
Junction-to-Case |
RqJ-C
|
1.3
|
1.3
|
°C/WATT TYP
|